2ST501T

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Mfr.Part #
2ST501T
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 350V 4A TO220
Stock
2,237
In Stock :
2,237

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Power - Max :
100W
Base Part Number :
2ST50
Max Collector Current :
4A
Max Power Dissipation :
100W
Current - Collector (Ic) (Max) :
4A
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 2mA, 2A
hFE Min :
2000
Weight :
2.299997g
Package / Case :
TO-220-3
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Max Breakdown Voltage :
350V
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Voltage (VCEO) :
350V
Transistor Type :
NPN - Darlington
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 2A 2V
Min Operating Temperature :
-65°C
Polarity :
NPN
Max Operating Temperature :
150°C
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Supplier Device Package :
TO-220AB
Collector Emitter Breakdown Voltage :
350V
Continuous Collector Current :
4A
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Saturation Voltage :
1.5V
Voltage - Collector Emitter Breakdown (Max) :
350V
Operating Temperature :
150°C TJ
Datasheets
2ST501T
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2ST501T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:2ST50, Package / Case:TO-220-3, Operating Temperature:150°C TJ, 2ST501T pinout, 2ST501T datasheet PDF, 2ST501T amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2ST501T ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2ST501T


NPN - Darlington 150°C TJ 100μA 1 Elements TO-220-3 Tube Through Hole

2ST501T Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 2A 2V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 2mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 350V volts that it can take.The product comes in the supplier device package of TO-220AB.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 4A volts at its maximum.

2ST501T Features


the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 2A
the emitter base voltage is kept at 5V
the supplier device package of TO-220AB


2ST501T Applications


There are a lot of STMicroelectronics
2ST501T applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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