2ST501T
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- Mfr.Part #
- 2ST501T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 4A TO220
- Stock
- 2,237
- In Stock ：
- 2,237
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150°C
- Weight :
- 2.299997g
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 100W
- Continuous Collector Current :
- 4A
- Factory Lead Time :
- 8 Weeks
- Polarity :
- NPN
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 2000
- Current - Collector (Ic) (Max) :
- 4A
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Voltage (VCEO) :
- 350V
- Supplier Device Package :
- TO-220AB
- Max Breakdown Voltage :
- 350V
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 100W
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- Max Collector Current :
- 4A
- Min Operating Temperature :
- -65°C
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- Base Part Number :
- 2ST50
- Datasheets
- 2ST501T
NPN - Darlington 150°C TJ 100μA 1 Elements TO-220-3 Tube Through Hole
2ST501T Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 2A 2V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 2mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 350V volts that it can take.The product comes in the supplier device package of TO-220AB.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 4A volts at its maximum.
2ST501T Features
the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 2A
the emitter base voltage is kept at 5V
the supplier device package of TO-220AB
2ST501T Applications
There are a lot of STMicroelectronics
2ST501T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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