2SK208-O(TE85L,F)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - JFETs

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

-5V

Number of Terminations :

3

Terminal Position :

Dual

Max Power Dissipation :

100mW

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2009

RoHS Status :

RoHS Compliant

Operating Temperature :

125°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

8.2pF @ 10V

Voltage - Cutoff (VGS off) @ Id :

400mV @ 100nA

Voltage - Breakdown (V(BR)GSS) :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

1.4mA

HTS Code :

8541.21.00.95

FET Type :

N-Channel

Factory Lead Time :

52 Weeks

Operating Mode :

Depletion Mode

Number of Pins :

3

Current - Drain (Idss) @ Vds (Vgs=0) :

600μA @ 10V

FET Technology :

JUNCTION

Current Drain (Id) - Max :

6.5mA

Mount :

Surface Mount