2SD882

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 2V

Mount :

Through Hole

Base Part Number :

2SD8

Collector Emitter Breakdown Voltage :

30V

Max Power Dissipation :

12.5W

Number of Terminations :

3

Transition Frequency :

100MHz

Frequency :

100MHz

Max Collector Current :

3A

Package / Case :

TO-225AA, TO-126-3

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Number of Elements :

1

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Packaging :

Tube

Current Rating :

3A

Transistor Type :

NPN

Width :

2.7mm

Pin Count :

3

Contact Plating :

Tin

Element Configuration :

Single

REACH SVHC :

No SVHC

Height :

10.8mm

Collector Emitter Saturation Voltage :

1.1V

Length :

7.8mm

Voltage - Rated DC :

30V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Gain Bandwidth Product :

100MHz

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Voltage (VCEO) :

30V

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 150mA, 3A

JESD-609 Code :

e3

Transistor Application :

SWITCHING

hFE Min :

100

Transistor Element Material :

SILICON

Power Dissipation :

12.5W