2SC5994-TD-E
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- Mfr.Part #
- 2SC5994-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A PCP
- Stock
- 1,018
- In Stock ：
- 1,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.5mm
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency :
- 420MHz
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.3W
- Published :
- 2005
- Case Connection :
- COLLECTOR
- Length :
- 4.5mm
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 420MHz
- Height :
- 1.5mm
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 135mV
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e6
- Transition Frequency :
- 420MHz
- Number of Elements :
- 1
- Pin Count :
- 3
- Package / Case :
- TO-243AA
- Max Collector Current :
- 2A
- Reach Compliance Code :
- not_compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation :
- 1.3W
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SC5994-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5994-TD-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 135mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.420MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SC5994-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
2SC5994-TD-E Applications
There are a lot of ON Semiconductor
2SC5994-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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