2SC5964-TD-E

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Mfr.Part #
2SC5964-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 50V 3A PCP
Stock
6,052
In Stock :
6,052

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Contact Plating :
Tin
Number of Pins :
3
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
50V
Collector Base Voltage (VCBO) :
100V
ECCN Code :
EAR99
hFE Min :
200
Vce Saturation (Max) @ Ib, Ic :
290mV @ 100mA, 2A
Length :
4.5mm
Max Collector Current :
3A
Power Dissipation :
1.3W
Emitter Base Voltage (VEBO) :
6V
Max Breakdown Voltage :
50V
Lead Free :
Lead Free
Reach Compliance Code :
not_compliant
Collector Emitter Saturation Voltage :
100mV
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Max Power Dissipation :
3.5W
Mount :
Surface Mount
Published :
2012
Height :
1.5mm
JESD-609 Code :
e6
Package / Case :
TO-243AA
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
50V
Transistor Type :
NPN
Number of Elements :
1
Width :
2.5mm
Power - Max :
3.5W
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Frequency :
380MHz
Current - Collector Cutoff (Max) :
1μA ICBO
Gain Bandwidth Product :
380MHz
Pin Count :
3
Mounting Type :
Surface Mount
Datasheets
2SC5964-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5964-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, 2SC5964-TD-E pinout, 2SC5964-TD-E datasheet PDF, 2SC5964-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5964-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5964-TD-E


NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-243AA Tape & Reel (TR) Surface Mount

2SC5964-TD-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.

2SC5964-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 290mV @ 100mA, 2A
the emitter base voltage is kept at 6V


2SC5964-TD-E Applications


There are a lot of ON Semiconductor
2SC5964-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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