2SC5868TLQ
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- Mfr.Part #
- 2SC5868TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TSMT3
- Stock
- 123,208
- In Stock ：
- 123,208
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e1
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 300MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SC5868
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 3
- hFE Min :
- 120
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 500mA
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Copper, Silver, Tin
- Factory Lead Time :
- 40 Weeks
- Transistor Type :
- NPN
- Package / Case :
- SC-96
- Pbfree Code :
- yes
- Published :
- 2004
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 60V
- Current Rating :
- 500mA
- Number of Elements :
- 1
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 75mV
- Transistor Application :
- SWITCHING
- Datasheets
- 2SC5868TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SC5868TLQ Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 75mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).300MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SC5868TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLQ Applications
There are a lot of ROHM Semiconductor
2SC5868TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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