2SC5707-E
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- Mfr.Part #
- 2SC5707-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 8A TP
- Stock
- 25,953
- In Stock ：
- 25,953
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 175mA, 3.5A
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 1W
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Saturation Voltage :
- 110mV
- Pbfree Code :
- yes
- Frequency :
- 330MHz
- Published :
- 2001
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 330MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- hFE Min :
- 200
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 8A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e6
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pin Count :
- 3
- Datasheets
- 2SC5707-E
NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5707-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.
2SC5707-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-E Applications
There are a lot of ON Semiconductor
2SC5707-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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