2SC5706-TL-E
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- Mfr.Part #
- 2SC5706-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TPFA
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 800mW
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 400MHz
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency :
- 400MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 5A
- hFE Min :
- 200
- Transistor Application :
- SWITCHING
- Length :
- 6.5mm
- Pin Count :
- 3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 2.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Power Dissipation :
- 800mW
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Transistor Type :
- NPN
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 160mV
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 400MHz
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- 2SC5706
- Published :
- 2005
- REACH SVHC :
- Unknown
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 2A
- Width :
- 5.5mm
- Datasheets
- 2SC5706-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC5706-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 400MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 5A volts.
2SC5706-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-E Applications
There are a lot of ON Semiconductor
2SC5706-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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