2SC5662T2LP
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- Mfr.Part #
- 2SC5662T2LP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 11V 0.05A VMT3
- Stock
- 6,730
- In Stock ：
- 6,730
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- Gain Bandwidth Product :
- 3.2 GHz
- Base Part Number :
- 2SC5662
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 10mA
- Terminal Position :
- Dual
- Published :
- 2010
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 3V
- Contact Plating :
- Copper, Tin
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 11V
- Collector-Base Capacitance-Max :
- 1.5pF
- Power Dissipation :
- 150mW
- Transition Frequency :
- 3200MHz
- Max Collector Current :
- 50mA
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 20V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 11V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 5mA 10V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 11V
- Voltage - Rated DC :
- 11V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- hFE Min :
- 56
- Current Rating :
- 50mA
- Max Power Dissipation :
- 150mW
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- Package / Case :
- SOT-723
- JESD-609 Code :
- e2
- Continuous Collector Current :
- 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Highest Frequency Band :
- S B
- Lead Free :
- Lead Free
- Datasheets
- 2SC5662T2LP
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5662T2LP Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC5662T2LP Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC5662T2LP Applications
There are a lot of ROHM Semiconductor
2SC5662T2LP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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