2SC5658RM3T5G
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- Mfr.Part #
- 2SC5658RM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT723
- Stock
- 3,763
- In Stock ：
- 3,763
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 2 Weeks
- Length :
- 1.25mm
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 1mA 6V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 260mW
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Base Part Number :
- 2SC5658
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 180MHz
- Width :
- 850μm
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 120
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 260mW
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Published :
- 2010
- Package / Case :
- SOT-723
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Height :
- 550μm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 180MHz
- Transition Frequency :
- 180MHz
- Contact Plating :
- Tin
- Datasheets
- 2SC5658RM3T5G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658RM3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 215 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 60mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SC5658RM3T5G Features
the DC current gain for this device is 215 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
2SC5658RM3T5G Applications
There are a lot of ON Semiconductor
2SC5658RM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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