2SC5242OTU
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- Mfr.Part #
- 2SC5242OTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3P
- Stock
- 5,507
- In Stock ：
- 5,507
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 55
- Base Part Number :
- 2SC5242
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 250V
- Frequency :
- 30MHz
- Published :
- 2015
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- NPN
- Transition Frequency :
- 30MHz
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 17A
- Weight :
- 6.401g
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Package / Case :
- TO-3P-3, SC-65-3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 30MHz
- Number of Elements :
- 1
- Packaging :
- Tube
- Power Dissipation :
- 130W
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Power Dissipation :
- 130W
- Mount :
- Through Hole
- Number of Pins :
- 3
- Datasheets
- 2SC5242OTU
NPN -55°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2SC5242OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 17A volts.
2SC5242OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5242OTU Applications
There are a lot of ON Semiconductor
2SC5242OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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