2SC5200OTU
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- Mfr.Part #
- 2SC5200OTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO264-3
- Stock
- 414
- In Stock ：
- 414
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Weight :
- 6.756g
- Number of Pins :
- 3
- Max Collector Current :
- 17A
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Collector Emitter Breakdown Voltage :
- 250V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Power Dissipation :
- 150W
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Base Part Number :
- 2SC5200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 250V
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Package / Case :
- TO-264-3, TO-264AA
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 150W
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 250V
- Mount :
- Through Hole
- Operating Temperature :
- -50°C~150°C TJ
- hFE Min :
- 55
- Frequency :
- 30MHz
- Gain Bandwidth Product :
- 30MHz
- Mounting Type :
- Through Hole
- Transition Frequency :
- 30MHz
- Datasheets
- 2SC5200OTU
NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
2SC5200OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.When VCE saturation is 3V @ 800mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 17A volts can be achieved.
2SC5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5200OTU Applications
There are a lot of ON Semiconductor
2SC5200OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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