2SC3649S-TD-E
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- Mfr.Part #
- 2SC3649S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A PCP
- Stock
- 60
- In Stock ：
- 60
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 130mV
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Base Part Number :
- 2SC3649
- Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- 180V
- Pin Count :
- 3
- Max Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- Max Collector Current :
- 1.5A
- Element Configuration :
- Single
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 120MHz
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Collector Emitter Voltage (VCEO) :
- 160V
- Terminal Form :
- Flat
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 160V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 120MHz
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Case Connection :
- COLLECTOR
- Datasheets
- 2SC3649S-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3649S-TD-E Overview
DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 130mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SC3649S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3649S-TD-E Applications
There are a lot of ON Semiconductor
2SC3649S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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