2SC3646T-TD-E
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- Mfr.Part #
- 2SC3646T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A PCP
- Stock
- 24,731
- In Stock ：
- 24,731
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Length :
- 4.5mm
- Factory Lead Time :
- 5 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Package / Case :
- TO-243AA
- Collector Emitter Saturation Voltage :
- 100mV
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 120MHz
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Max Frequency :
- 1MHz
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Width :
- 2.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2009
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Height :
- 1.5mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Datasheets
- 2SC3646T-TD-E
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3646T-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SC3646T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3646T-TD-E Applications
There are a lot of ON Semiconductor
2SC3646T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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