2SC3503CSTU

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Mfr.Part #
2SC3503CSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 300V 0.1A TO126-3
Stock
27,641
In Stock :
27,641

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
2SC3503
Collector Emitter Voltage (VCEO) :
300V
RoHS Status :
RoHS Compliant
Transition Frequency :
150MHz
Number of Terminations :
3
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
300V
Element Configuration :
Single
Gain Bandwidth Product :
150MHz
Polarity/Channel Type :
NPN
Max Power Dissipation :
7W
Power Dissipation :
7W
Packaging :
Tube
Collector Base Voltage (VCBO) :
300V
Number of Elements :
1
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 10V
hFE Min :
40
Frequency :
150MHz
Vce Saturation (Max) @ Ib, Ic :
600mV @ 2mA, 20mA
Weight :
761mg
Transistor Type :
NPN
Max Collector Current :
100mA
Package / Case :
TO-225AA, TO-126-3
Number of Pins :
3
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
5V
Datasheets
2SC3503CSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC3503CSTU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SC3503, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Mounting Type:Through Hole, 2SC3503CSTU pinout, 2SC3503CSTU datasheet PDF, 2SC3503CSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC3503CSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC3503CSTU


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

2SC3503CSTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.

2SC3503CSTU Features


the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


2SC3503CSTU Applications


There are a lot of ON Semiconductor
2SC3503CSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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