2SC3380ASTR-E
- Mfr.Part #
- 2SC3380ASTR-E
- Manufacturer
- Renesas Electronics Corporation
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- 2SC3380ASTR - SILICON NPN TRIPLE
- Stock
- 16,000
- In Stock :
- 16,000
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-F3
- Terminal Position :
- Single
- DC Current Gain-Min (hFE) :
- 30
- Supplier Device Package :
- UPAK
- Current - Collector (Ic) (Max) :
- 100 mA
- Power Dissipation-Max (Abs) :
- 1 W
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 1 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA, 20V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e6
- Subcategory :
- Other Transistors
- Qualification Status :
- Not Qualified
- Manufacturer :
- Renesas Electronics Corporation
- Transistor Application :
- AMPLIFIER
- Package :
- Bulk
- Series :
- -
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Configuration :
- Single
- Product Status :
- Obsolete
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- 80MHz
- Terminal Form :
- Flat
- Package / Case :
- TO-243AA
- Pin Count :
- 4
- Collector-Emitter Voltage-Max :
- 300 V
- Mounting Type :
- Surface Mount
- Brand Name :
- Renesas
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 20mA
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 1μA
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
- Collector Current-Max (IC) :
- 0.1 A
- Datasheets
- 2SC3380ASTR-E
NPN 150°C (TJ) 1μA 1 Elements SILICON NPN TO-243AA Surface Mount
2SC3380ASTR-E Overview
This device has a DC current gain of 30 @ 20mA, 20V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UPAK.Maximum collector-emitter voltage can be set to 300 V.Detection of Collector Emitter Breakdown at 300 V maximal voltage is present.
2SC3380ASTR-E Features
the DC current gain for this device is 30 @ 20mA, 20V
the vce saturation(Max) is 1.5V @ 2mA, 20mA
the supplier device package of UPAK
2SC3380ASTR-E Applications
There are a lot of Renesas
2SC3380ASTR-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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