2SC3380ASTR-E

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Mfr.Part #
2SC3380ASTR-E
Manufacturer
Renesas Electronics Corporation
Package / Case
TO-243AA
Datasheet
Download
Description
2SC3380ASTR - SILICON NPN TRIPLE
Stock
16,000
In Stock :
16,000

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
JESD-30 Code :
R-PSSO-F3
Terminal Position :
Single
DC Current Gain-Min (hFE) :
30
Supplier Device Package :
UPAK
Current - Collector (Ic) (Max) :
100 mA
Power Dissipation-Max (Abs) :
1 W
Transistor Type :
NPN
Peak Reflow Temperature (Cel) :
260
Power - Max :
1 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 20mA, 20V
ECCN Code :
EAR99
JESD-609 Code :
e6
Subcategory :
Other Transistors
Qualification Status :
Not Qualified
Manufacturer :
Renesas Electronics Corporation
Transistor Application :
AMPLIFIER
Package :
Bulk
Series :
-
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Configuration :
Single
Product Status :
Obsolete
Polarity/Channel Type :
NPN
Frequency - Transition :
80MHz
Terminal Form :
Flat
Package / Case :
TO-243AA
Pin Count :
4
Collector-Emitter Voltage-Max :
300 V
Mounting Type :
Surface Mount
Brand Name :
Renesas
Package Shape :
RECTANGULAR
Number of Elements :
1
Number of Terminals :
3
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 2mA, 20mA
Case Connection :
COLLECTOR
Operating Temperature :
150°C (TJ)
Current - Collector Cutoff (Max) :
1μA
Voltage - Collector Emitter Breakdown (Max) :
300 V
Collector Current-Max (IC) :
0.1 A
Datasheets
2SC3380ASTR-E
Introducing Transistors - Bipolar (BJT) - Single Renesas Electronics Corporation 2SC3380ASTR-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:150°C (TJ), 2SC3380ASTR-E pinout, 2SC3380ASTR-E datasheet PDF, 2SC3380ASTR-E amp .Beyond Transistors - Bipolar (BJT) - Single Renesas Electronics Corporation 2SC3380ASTR-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C (TJ) 1μA 1 Elements SILICON NPN TO-243AA Surface Mount

2SC3380ASTR-E Overview


This device has a DC current gain of 30 @ 20mA, 20V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UPAK.Maximum collector-emitter voltage can be set to 300 V.Detection of Collector Emitter Breakdown at 300 V maximal voltage is present.

2SC3380ASTR-E Features


the DC current gain for this device is 30 @ 20mA, 20V
the vce saturation(Max) is 1.5V @ 2mA, 20mA
the supplier device package of UPAK


2SC3380ASTR-E Applications


There are a lot of Renesas
2SC3380ASTR-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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