2SC3265-Y,LF
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- Mfr.Part #
- 2SC3265-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO236
- Stock
- 7,449
- In Stock ：
- 7,449
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Unknown
- Continuous Collector Current :
- 800mA
- ECCN Code :
- EAR99
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2014
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 120MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 120MHz
- Collector Emitter Saturation Voltage :
- 400mV
- JESD-30 Code :
- R-PDSO-G3
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 12 Weeks
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Terminal Form :
- Gull wing
- Datasheets
- 2SC3265-Y,LF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC3265-Y,LF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 800mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
2SC3265-Y,LF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2SC3265-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3265-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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