2SC3143-5-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

160 V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Number of Elements :

1

Power - Max :

200 mW

Operating Temperature :

125°C (TJ)

Polarity/Channel Type :

NPN

Supplier Device Package :

3-CP

DC Current Gain-Min (hFE) :

135

Manufacturer :

ON Semiconductor

Transistor Element Material :

SILICON

Configuration :

Single

Reach Compliance Code :

Compliant

Package :

Bulk

Power Dissipation-Max (Abs) :

0.2 W

Surface Mount :

yes

Collector Current-Max (IC) :

0.08 A

Vce Saturation (Max) @ Ib, Ic :

700mV @ 3mA, 30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 5V

RoHS :

Non-Compliant

JESD-609 Code :

e6

Collector-Emitter Voltage-Max :

160 V

Collector-Base Capacitance-Max :

2.8 pF

Mounting Type :

Surface Mount

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA (ICBO)

Number of Terminals :

3

Series :

-

Factory Lead Time :

1 Week

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

80 mA

VCEsat-Max :

0.7 V

Package Shape :

RECTANGULAR

Power Dissipation Ambient-Max :

0.2 W

Product Status :

Active

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency - Transition :

150MHz

Transistor Type :

NPN

Terminal Form :

Gull wing