2SB815-7-TB-E
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- Mfr.Part #
- 2SB815-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.7A 3CP
- Stock
- 13,353
- In Stock ：
- 13,353
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 250MHz
- hFE Min :
- 300
- JESD-609 Code :
- e6
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.1mm
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 15V
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 50mA 2V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -120mV
- Width :
- 1.5mm
- Transition Frequency :
- 250MHz
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Pin Count :
- 3
- Published :
- 2012
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Operating Temperature :
- 125°C TJ
- Current - Collector (Ic) (Max) :
- 700mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- -20V
- Max Collector Current :
- 700mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Datasheets
- 2SB815-7-TB-E
2SB815-7-TB-E Documents
PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB815-7-TB-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 50mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 80mV @ 10mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
2SB815-7-TB-E Features
the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
2SB815-7-TB-E Applications
There are a lot of ON Semiconductor
2SB815-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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