2SB1420
- Mfr.Part #
- 2SB1420
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 16A TO3P
- Stock
- 1,082
- In Stock :
- 1,082
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 80W
- DC Current Gain-Min (hFE) :
- 2000
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-3P
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Series :
- -
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.04
- JESD-30 Code :
- R-PSFM-T3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 16mA, 8A
- Power - Max :
- 80W
- Collector Current-Max (IC) :
- 16 A
- Frequency - Transition :
- 50MHz
- Product Status :
- Obsolete
- Package Shape :
- RECTANGULAR
- Current - Collector (Ic) (Max) :
- 16 A
- Terminal Position :
- Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Published :
- 2007
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Package / Case :
- TO-3P-3, SC-65-3
- Package :
- Bulk
- Pin Count :
- 3
- Collector-Emitter Voltage-Max :
- 120 V
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 8A 4V
- Max Collector Current :
- 16A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 24 Weeks
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Manufacturer :
- Sanken Electric Co Ltd
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 80 W
- Transition Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SB1420

PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Bulk Through Hole
2SB1420 Overview
This device has a DC current gain of 2000 @ 8A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 50MHz.Single BJT transistor comes in a supplier device package of TO-3P.Maximum collector-emitter voltage can be set to 120 V.Detection of Collector Emitter Breakdown at 120 V maximal voltage is present.The maximum collector current is 16A volts.
2SB1420 Features
the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 50MHz
the supplier device package of TO-3P
2SB1420 Applications
There are a lot of Sanken
2SB1420 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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