2SB1383
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- Mfr.Part #
- 2SB1383
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 25A TO3P
- Stock
- 9,370
- In Stock ：
- 9,370
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package Shape :
- RECTANGULAR
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Power Dissipation-Max (Abs) :
- 120 W
- Number of Elements :
- 1
- Mount :
- Through Hole
- Power Dissipation :
- 120(W)
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Package :
- Bulk
- Qualification Status :
- Not Qualified
- Product Status :
- Obsolete
- Packaging :
- Bulk
- Package / Case :
- TO-3P-3, SC-65-3
- DC Current Gain-Min (hFE) :
- 2000
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Published :
- 2007
- Collector Current (DC) :
- 25(A)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 25A
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Compliant
- Power - Max :
- 120W
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Operating Temperature :
- 150°C TJ
- Operating Temp Range :
- -55C to 150C
- Pin Count :
- 3
- DC Current Gain :
- 2000
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 25A
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 120V
- Mounting :
- Through Hole
- Manufacturer :
- Sanken Electric Co Ltd
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.04
- Rad Hardened :
- No
- Frequency - Transition :
- 50MHz
- Surface Mount :
- No
- Operating Temperature Classification :
- Military
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 12A 4V
- Collector Current-Max (IC) :
- 25 A
- Emitter-Base Voltage :
- 6(V)
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Transition Frequency :
- 50MHz
- Maximum Collector Cut-off Current :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 24mA, 12A
- Factory Lead Time :
- 24 Weeks
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Series :
- --
- Collector-Base Voltage :
- 120(V)
- Number of Terminations :
- 3
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 120W
- Base-Emitter Saturation Voltage (Max) :
- 2.5(V)
- Package Type :
- TO-3P
- Collector-Emitter Voltage-Max :
- 120 V
- Supplier Device Package :
- TO-3P
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Collector-Emitter Voltage :
- 120(V)
- Datasheets
- 2SB1383
PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Bulk Through Hole
2SB1383 Overview
This device has a DC current gain of 2000 @ 12A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.8V @ 24mA, 12A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Product package TO-3P comes from the supplier.120 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 120VV - Maximum voltage.A maximum collector current of 25A volts is possible.
2SB1383 Features
the DC current gain for this device is 2000 @ 12A 4V
the vce saturation(Max) is 1.8V @ 24mA, 12A
a transition frequency of 50MHz
the supplier device package of TO-3P
2SB1383 Applications
There are a lot of Sanken
2SB1383 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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