2SB1382
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- Mfr.Part #
- 2SB1382
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 16A TO3PF
- Stock
- 8,598
- In Stock ：
- 8,598
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- yes
- Package Type :
- TO-3PF
- DC Current Gain-Min (hFE) :
- 2000
- Packaging :
- Bulk
- Terminal Form :
- THROUGH-HOLE
- Mounting :
- Through Hole
- DC Current Gain :
- 2000
- Lead Free :
- Lead Free
- Package / Case :
- TO-3P-3 Full Pack
- Reach Compliance Code :
- Unknown
- Collector Current-Max (IC) :
- 16 A
- Mount :
- Through Hole
- Emitter-Base Voltage :
- 6(V)
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Polarity :
- PNP
- Factory Lead Time :
- 36 Weeks
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Operating Temp Range :
- -55C to 150C
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 120V
- Transition Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 16A
- Base-Emitter Saturation Voltage (Max) :
- 2.5(V)
- Collector Emitter Voltage (VCEO) :
- 1.5V
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 50MHz
- Published :
- 2007
- Manufacturer :
- Sanken Electric Co Ltd
- Pin Count :
- 3
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 16mA, 8A
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Transistor Application :
- SWITCHING
- Series :
- --
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 8A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Power Dissipation :
- 75(W)
- Supplier Device Package :
- TO-3PF
- Operating Temperature Classification :
- Military
- Surface Mount :
- No
- Collector-Base Voltage :
- 120(V)
- Collector-Emitter Voltage-Max :
- 120 V
- Collector Current (DC) :
- 16(A)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 75W
- Power Dissipation-Max (Abs) :
- 75 W
- Collector-Emitter Voltage :
- 120(V)
- Polarity/Channel Type :
- PNP
- Maximum Collector Cut-off Current :
- 10
- Max Power Dissipation :
- 75W
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Rad Hardened :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 16A
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- RoHS :
- Compliant
- Datasheets
- 2SB1382
PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Bulk Through Hole
2SB1382 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 8A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 50MHz in the part.There is no device package available from the supplier for this product.120 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 120V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 16A volts.
2SB1382 Features
the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 50MHz
the supplier device package of TO-3PF
2SB1382 Applications
There are a lot of Sanken
2SB1382 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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