2SB1216S-H

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Mfr.Part #
2SB1216S-H
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 100V 4A TP
Stock
40,974
In Stock :
40,974

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Transistor Element Material :
SILICON
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Transistor Application :
SWITCHING
Power - Max :
1W
Terminal Finish :
Tin/Bismuth (Sn/Bi)
ECCN Code :
EAR99
Base Part Number :
2SB1216
Published :
2012
Pbfree Code :
yes
JESD-609 Code :
e6
Configuration :
Single
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Factory Lead Time :
31 Weeks
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Packaging :
Bulk
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 5V
Transition Frequency :
130MHz
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
1μA ICBO
Number of Pins :
3
Frequency - Transition :
130MHz
Case Connection :
COLLECTOR
HTS Code :
8541.29.00.75
Max Collector Current :
4A
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
100V
hFE Min :
70
Max Power Dissipation :
1W
Surface Mount :
No
Emitter Base Voltage (VEBO) :
-6V
Number of Elements :
1
Transistor Type :
PNP
Terminal Position :
Single
Collector Base Voltage (VCBO) :
120V
Halogen Free :
Halogen Free
Datasheets
2SB1216S-H
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-H from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:2SB1216, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, 2SB1216S-H pinout, 2SB1216S-H datasheet PDF, 2SB1216S-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1216S-H


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1216S-H Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 130MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

2SB1216S-H Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz


2SB1216S-H Applications


There are a lot of ON Semiconductor
2SB1216S-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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