2SB1216S-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

100V

ECCN Code :

EAR99

Frequency - Transition :

130MHz

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Max Collector Current :

4A

Operating Temperature :

150°C TJ

Number of Pins :

3

hFE Min :

70

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA ICBO

Transistor Element Material :

SILICON

Max Power Dissipation :

1W

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Collector Base Voltage (VCBO) :

120V

Collector Emitter Voltage (VCEO) :

100V

Published :

2012

JESD-609 Code :

e6

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

-6V

HTS Code :

8541.29.00.75

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power - Max :

1W

Terminal Position :

Single

Transistor Type :

PNP

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 500mA 5V

Base Part Number :

2SB1216

Number of Elements :

1

Packaging :

Bulk

Transition Frequency :

130MHz

Pin Count :

3

Configuration :

Single

Pbfree Code :

yes

Number of Terminations :

3

Case Connection :

COLLECTOR

Terminal Finish :

Tin/Bismuth (Sn/Bi)