2SB1205T-TL-E
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- Mfr.Part #
- 2SB1205T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A TP-FA
- Stock
- 8,108
- In Stock ：
- 8,108
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 5A
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Breakdown Voltage :
- 20V
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- 2SB1205
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- -500mV
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 5A
- Emitter Base Voltage (VEBO) :
- -5V
- Lead Free :
- Lead Free
- Published :
- 2012
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- -25V
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 60mA, 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Pins :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e6
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 320MHz
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Datasheets
- 2SB1205T-TL-E
PNP 150°C TJ 500nA ICBO PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1205T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 60mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.During maximum operation, collector current can be as low as 5A volts.
2SB1205T-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V
2SB1205T-TL-E Applications
There are a lot of ON Semiconductor
2SB1205T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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