2SB1203T-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

JESD-609 Code :

e6

Power - Max :

1W

Frequency - Transition :

130MHz

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-6V

Pin Count :

3

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins :

3

Pbfree Code :

yes

Terminal Position :

Single

hFE Min :

70

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Max Power Dissipation :

1W

Max Collector Current :

5A

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Transistor Type :

PNP

Transition Frequency :

130MHz

Number of Terminations :

3

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Factory Lead Time :

6 Weeks

Reach Compliance Code :

not_compliant

Vce Saturation (Max) @ Ib, Ic :

550mV @ 150mA, 3A

Surface Mount :

No

Base Part Number :

2SB1203

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

1μA ICBO

Case Connection :

COLLECTOR

Published :

2011

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole