2SB1202T-E
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- Mfr.Part #
- 2SB1202T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A TP
- Stock
- 10,549
- In Stock ：
- 10,549
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Configuration :
- Single
- Surface Mount :
- No
- Base Part Number :
- 2SB1202
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 50V
- Emitter Base Voltage (VEBO) :
- -6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 100
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Collector Current :
- 5A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Frequency - Transition :
- 150MHz
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 3A
- Datasheets
- 2SB1202T-E
PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1202T-E Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 2A.An emitter's base voltage can be kept at -6V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.
2SB1202T-E Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SB1202T-E Applications
There are a lot of ON Semiconductor
2SB1202T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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