2SB1198KT146R
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- Mfr.Part #
- 2SB1198KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SMT3
- Stock
- 33,741
- In Stock ：
- 33,741
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- VCEsat-Max :
- 0.5 V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Number of Pins :
- 3
- Current Rating :
- -500mA
- Published :
- 1998
- hFE Min :
- 120
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 180MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- -80V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -200mV
- Power - Max :
- 200mW
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Transition Frequency :
- 180MHz
- Factory Lead Time :
- 13 Weeks
- Collector Base Voltage (VCBO) :
- -80V
- Terminal Position :
- Dual
- HTS Code :
- 8541.21.00.75
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Contact Plating :
- Copper, Silver, Tin
- Base Part Number :
- 2SB1198
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -500mA
- Polarity/Channel Type :
- PNP
- Datasheets
- 2SB1198KT146R
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1198KT146R Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SB1198KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146R Applications
There are a lot of ROHM Semiconductor
2SB1198KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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