2SB1143T
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- Mfr.Part #
- 2SB1143T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 4A TO126ML
- Stock
- 26,053
- In Stock ：
- 26,053
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.5W
- Mounting Type :
- Through Hole
- Published :
- 2003
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 4A
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Height :
- 11mm
- Max Frequency :
- 150MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 50V
- Length :
- 8mm
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 3.3mm
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -700mV
- Max Collector Current :
- 4A
- Surface Mount :
- No
- Pbfree Code :
- yes
- Datasheets
- 2SB1143T
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SB1143T Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 4A volts.
2SB1143T Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1143T Applications
There are a lot of ON Semiconductor
2SB1143T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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