2SB1124T-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

Transistor Type :

PNP

Mount :

Surface Mount

Max Power Dissipation :

500mW

Factory Lead Time :

14 Weeks

Power Dissipation :

500mW

Base Part Number :

2SB1124

Mounting Type :

Surface Mount

Number of Terminations :

3

Terminal Form :

Flat

Transistor Element Material :

SILICON

Element Configuration :

Single

JESD-609 Code :

e6

Case Connection :

COLLECTOR

Pbfree Code :

yes

Package / Case :

TO-243AA

Length :

4.5mm

Frequency :

150MHz

Width :

2.5mm

Packaging :

Tape and Reel (TR)

Published :

2003

ECCN Code :

EAR99

Gain Bandwidth Product :

150MHz

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Collector Current :

3A

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 2A

Max Breakdown Voltage :

50V

Number of Pins :

3

Transition Frequency :

150MHz

Collector Base Voltage (VCBO) :

-60V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Height :

1.5mm

Emitter Base Voltage (VEBO) :

-6V

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Saturation Voltage :

-700mV

Polarity/Channel Type :

PNP

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Number of Elements :

1