2SB1124S-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

2.5mm

Collector Emitter Voltage (VCEO) :

50V

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2012

Emitter Base Voltage (VEBO) :

-6V

Collector Base Voltage (VCBO) :

-60V

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Terminal Form :

Flat

JESD-609 Code :

e6

Length :

4.5mm

Terminal Finish :

Tin/Bismuth (Sn/Bi)

hFE Min :

100

Lead Free :

Lead Free

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 100mA 2V

Number of Pins :

3

Transistor Element Material :

SILICON

Transition Frequency :

150MHz

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Frequency - Transition :

150MHz

Package / Case :

TO-243AA

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

3A

Base Part Number :

2SB1124

Mount :

Surface Mount

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Pin Count :

3

Current - Collector Cutoff (Max) :

1μA ICBO

Transistor Application :

SWITCHING

Max Power Dissipation :

500mW

Max Frequency :

150MHz

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 2A

HTS Code :

8541.21.00.75

Factory Lead Time :

10 Weeks

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

-700mV

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ