2SB1123T-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Flat

Max Operating Temperature :

150°C

Number of Elements :

1

Min Operating Temperature :

-55°C

Length :

4.5mm

Emitter Base Voltage (VEBO) :

-6V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Collector Emitter Saturation Voltage :

-300mV

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

hFE Min :

100

Gain Bandwidth Product :

150MHz

Max Power Dissipation :

500mW

Number of Terminations :

3

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

2A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e6

Pbfree Code :

yes

Published :

2012

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn On Time-Max (ton) :

60ns

Case Connection :

COLLECTOR

Factory Lead Time :

5 Weeks

Collector Base Voltage (VCBO) :

-60V

Element Configuration :

Single

HTS Code :

8541.21.00.75

Transition Frequency :

150MHz

Width :

2.5mm

Max Frequency :

150MHz

Pin Count :

3

Surface Mount :

yes

Turn Off Time-Max (toff) :

480ns

Polarity :

PNP

Transistor Application :

SWITCHING

DC Current Gain-Min (hFE) :

200

Terminal Finish :

Tin/Bismuth (Sn/Bi)

ECCN Code :

EAR99

Height :

1.5mm