2SB1121S-TD-E

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Mfr.Part #
2SB1121S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 25V 2A PCP
Stock
34,219
In Stock :
34,219

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2012
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Frequency :
150MHz
Package / Case :
TO-243AA
Mount :
Surface Mount
Length :
4.5mm
RoHS Status :
ROHS3 Compliant
Height :
1.5mm
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
6V
Frequency - Transition :
150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 2V
Collector Emitter Voltage (VCEO) :
25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Base Voltage (VCBO) :
30V
Max Collector Current :
2A
Max Power Dissipation :
500mW
ECCN Code :
EAR99
JESD-609 Code :
e6
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
600mV @ 75mA, 1.5A
Element Configuration :
Single
Operating Temperature :
150°C TJ
Reach Compliance Code :
not_compliant
Packaging :
Tape and Reel (TR)
Collector Emitter Saturation Voltage :
-600mV
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Width :
2.5mm
Pin Count :
3
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
25V
Pbfree Code :
yes
Number of Pins :
3
Transistor Type :
PNP
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
2SB1121S-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1121S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, 2SB1121S-TD-E pinout, 2SB1121S-TD-E datasheet PDF, 2SB1121S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1121S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1121S-TD-E


PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2SB1121S-TD-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 2A volts.

2SB1121S-TD-E Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V


2SB1121S-TD-E Applications


There are a lot of ON Semiconductor
2SB1121S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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