2PC1815GR,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

1996

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Packaging :

Tape and Box (TB)

VCEsat-Max :

0.3 V

Frequency - Transition :

80MHz

Terminal Finish :

Matte Tin (Sn)

Configuration :

Single

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

0.5W

Reach Compliance Code :

Unknown

Number of Elements :

1

Base Part Number :

2PC1815

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

150mA

Transistor Element Material :

SILICON

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Surface Mount :

No

HTS Code :

8541.21.00.95

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 6V

Collector-Base Capacitance-Max :

3.5pF

Power - Max :

500mW

JESD-30 Code :

O-PBCY-T3

Transition Frequency :

80MHz

ECCN Code :

EAR99

JESD-609 Code :

e3