2N7368
- Mfr.Part #
- 2N7368
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 29,887
- In Stock :
- 29,887
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- S-MSFM-P3
- RoHS :
- Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Package Shape :
- Square
- Collector Emitter Voltage (VCEO) :
- 80 V
- Subcategory :
- Other Transistors
- Number of Elements :
- 1
- Terminal Position :
- Single
- Mount :
- Through Hole
- Min Operating Temperature :
- -65 °C
- Collector Base Voltage (VCBO) :
- 80 V
- Number of Pins :
- 3
- Pin Count :
- 3
- Manufacturer :
- Microsemi Corporation
- Power Dissipation-Max (Abs) :
- 115 W
- Series :
- -
- Max Collector Current :
- 10 A
- Reach Compliance Code :
- Unknown
- Current - Collector (Ic) (Max) :
- 10 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Transistor Type :
- NPN
- Technology :
- Si
- Product Status :
- Active
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Package / Case :
- TO-254-3, TO-254AA
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- JEDEC-95 Code :
- TO-254AA
- Power - Max :
- 115 W
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-254AA
- DC Current Gain-Min (hFE) :
- 30
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Collector Current-Max (IC) :
- 10 A
- Max Operating Temperature :
- 200 °C
- Terminal Finish :
- TIN LEAD
- Pbfree Code :
- No
- Terminal Form :
- PIN/PEG
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Polarity :
- NPN
- Configuration :
- Single
- Max Power Dissipation :
- 115 W
- Number of Terminals :
- 3
- Collector-Emitter Voltage-Max :
- 80 V
- Datasheets
- 2N7368
NPN -65°C ~ 200°C (TJ) 1mA 1 Elements SILICON NPN TO-254-3, TO-254AA Bulk Through Hole
2N7368 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 1A, 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 500mA, 5A.The product comes in the supplier device package of TO-254AA.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 10 A volts at its maximum.
2N7368 Features
the DC current gain for this device is 50 @ 1A, 2V
the vce saturation(Max) is 1V @ 500mA, 5A
the supplier device package of TO-254AA
2N7368 Applications
There are a lot of Microchip Technology
2N7368 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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