2N6520TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Turn On Time-Max (ton) :

200ns

Number of Pins :

3

Terminal Position :

BOTTOM

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Transition Frequency :

40MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Frequency :

200MHz

Length :

4.58mm

Max Power Dissipation :

625mW

Transistor Type :

PNP

Number of Elements :

1

Operating Temperature :

150°C TJ

Current Rating :

-500mA

Weight :

240mg

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Base Voltage (VCBO) :

-350V

Emitter Base Voltage (VEBO) :

-5V

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

350V

Height :

4.58mm

Max Breakdown Voltage :

350V

Max Collector Current :

500mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

625mW

Published :

2007

Packaging :

Tape and Box (TB)

Pbfree Code :

yes

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

-1V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

350V

hFE Min :

30

Voltage - Rated DC :

-350V

Factory Lead Time :

6 Weeks

Base Part Number :

2N6520

Element Configuration :

Single

JESD-609 Code :

e3

Contact Plating :

Tin

Width :

3.86mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Radiation Hardening :

No

Gain Bandwidth Product :

200MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA