2N6517RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Number of Terminations :

3

Max Power Dissipation :

625mW

Collector Emitter Breakdown Voltage :

350V

HTS Code :

8541.21.00.95

Collector Base Voltage (VCBO) :

350V

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

6V

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Box (TB)

Number of Elements :

1

Mount :

Through Hole

JESD-30 Code :

O-PBCY-T3

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Turn Off Time-Max (toff) :

3500ns

Current - Collector Cutoff (Max) :

50nA ICBO

Gain Bandwidth Product :

200MHz

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Base Part Number :

2N6517

Lead Free :

Contains Lead

Published :

2004

JESD-609 Code :

e0

Voltage - Rated DC :

350V

Max Collector Current :

500mA

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

40MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Transistor Application :

SWITCHING

Element Configuration :

Single

Transistor Element Material :

SILICON

hFE Min :

20

Peak Reflow Temperature (Cel) :

240

Reach Compliance Code :

not_compliant

Collector Emitter Saturation Voltage :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Current Rating :

500mA