2N6517G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Transistor Type :

NPN

HTS Code :

8541.21.00.95

Max Collector Current :

500mA

Lead Free :

Lead Free

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Base Part Number :

2N6517

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1V

Number of Elements :

1

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

350V

Voltage - Rated DC :

350V

Transition Frequency :

40MHz

Current - Collector Cutoff (Max) :

50nA ICBO

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

500mA

Power Dissipation :

625mW

ECCN Code :

EAR99

Max Power Dissipation :

625mW

JESD-609 Code :

e1

Gain Bandwidth Product :

200MHz

Published :

2007

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

350V

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1V

Packaging :

Bulk

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

hFE Min :

20

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Surface Mount :

No

Qualification Status :

Not Qualified

Pbfree Code :

yes