2N6517CTA
- Mfr.Part #
- 2N6517CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A TO92-3
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N6517
- Factory Lead Time :
- 7 Weeks
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Transition Frequency :
- 40MHz
- Collector Base Voltage (VCBO) :
- 350V
- Max Breakdown Voltage :
- 350V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 350V
- JESD-609 Code :
- e3
- Published :
- 2007
- Max Collector Current :
- 500mA
- Frequency :
- 200MHz
- Width :
- 3.86mm
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 350V
- Length :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Current Rating :
- 500mA
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 30
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Datasheets
- 2N6517CTA

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6517CTA Overview
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.
2N6517CTA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517CTA Applications
There are a lot of ON Semiconductor
2N6517CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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