2N6517

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Peak Reflow Temperature (Cel) :

240

Current Rating :

500mA

Transistor Application :

SWITCHING

Pin Count :

3

Collector Emitter Breakdown Voltage :

350V

HTS Code :

8541.21.00.95

Base Part Number :

2N6517

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

6V

Power Dissipation :

625mW

Max Power Dissipation :

625mW

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Transition Frequency :

40MHz

Voltage - Rated DC :

350V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Transistor Type :

NPN

hFE Min :

20

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Pins :

3

Collector Emitter Saturation Voltage :

1V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

200MHz

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Max Collector Current :

500mA

Number of Terminations :

3

Element Configuration :

Single

Packaging :

Bulk

Pbfree Code :

No

ECCN Code :

EAR99

Mount :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

RoHS Status :

Non-RoHS Compliant