2N6491

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Frequency :

5MHz

Voltage - Rated DC :

-80V

Surface Mount :

No

Width :

4.82mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

15A

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 5A, 15A

Collector Emitter Breakdown Voltage :

80V

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Transistor Type :

PNP

Radiation Hardening :

No

Number of Terminations :

3

Weight :

4.535924g

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.8W

Package / Case :

TO-220-3

Max Collector Current :

15A

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 4V

Base Part Number :

2N6491

Collector Emitter Saturation Voltage :

3.5V

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

90V

Number of Pins :

3

Gain Bandwidth Product :

5MHz

Published :

2006

Transition Frequency :

5MHz

Contact Plating :

Tin

Transistor Element Material :

SILICON

Height :

15.75mm

Number of Elements :

1

hFE Min :

20

Lead Free :

Lead Free

Pin Count :

3

Power Dissipation :

1.8W

Length :

10.28mm

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

1mA