2N6287G
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- Mfr.Part #
- 2N6287G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 20A TO204
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Base Part Number :
- 2N6287
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- -100V
- Case Connection :
- COLLECTOR
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Continuous Collector Current :
- 20A
- Polarity :
- PNP
- Current - Collector Cutoff (Max) :
- 1mA
- ECCN Code :
- EAR99
- Number of Pins :
- 2
- Weight :
- 13.607771g
- Max Collector Current :
- 20A
- Element Configuration :
- Single
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- -65°C~200°C TJ
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 160W
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Height :
- 8.51mm
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -20A
- Width :
- 26.67mm
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 160W
- Transition Frequency :
- 4MHz
- Number of Terminations :
- 2
- Length :
- 39.37mm
- JESD-609 Code :
- e3
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 2
- Packaging :
- Tray
- Published :
- 2008
- Datasheets
- 2N6287G
PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
2N6287G Overview
In this device, the DC current gain is 750 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.A 20A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -20A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.
2N6287G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 4MHz
2N6287G Applications
There are a lot of ON Semiconductor
2N6287G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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