2N6284
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- Mfr.Part #
- 2N6284
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 28,379
- In Stock ：
- 28,379
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 5 Weeks
- Pin Count :
- 2
- Pbfree Code :
- yes
- Packaging :
- Tray
- Transition Frequency :
- 4MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Weight :
- 13.607771g
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Max Power Dissipation :
- 160W
- Height :
- 26.67mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Voltage - Rated DC :
- 100V
- Published :
- 1998
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 160W
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Width :
- 8.509mm
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 20A
- Length :
- 39.37mm
- Package / Case :
- TO-204AA, TO-3
- Current - Collector Cutoff (Max) :
- 1mA
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 20A
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 2
- Base Part Number :
- 2N6284
- Current Rating :
- 20A
- Polarity :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Number of Pins :
- 2
- Terminal Position :
- BOTTOM
- Datasheets
- 2N6284
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
2N6284G Overview
DC current gain in this device equals 750 @ 10A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 200mA, 20A.Single BJT transistor is essential to maintain the continuous collector voltage at 20A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 20A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 20A volts.
2N6284G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz
2N6284G Applications
There are a lot of ON Semiconductor
2N6284G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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