2N6045

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Mfr.Part #
2N6045
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
973
In Stock :
973

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
75W
Time@Peak Reflow Temperature-Max (s) :
40
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Polarity :
NPN
Max Collector Current :
8A
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
100V
Current Rating :
8A
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Height :
15.748mm
Length :
10.2616mm
hFE Min :
1000
Collector Emitter Breakdown Voltage :
100V
Mounting Type :
Through Hole
Element Configuration :
Single
Case Connection :
COLLECTOR
Number of Pins :
3
Current - Collector Cutoff (Max) :
20μA
Lifecycle Status :
ACTIVE (Last Updated: 22 hours ago)
Published :
2006
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Operating Temperature :
-65°C~150°C TJ
Base Part Number :
2N6045
Power Dissipation :
75W
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
2V
Radiation Hardening :
No
Number of Terminations :
3
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Packaging :
Tube
Weight :
4.535924g
Transistor Type :
NPN - Darlington
Voltage - Rated DC :
-100V
Number of Elements :
1
REACH SVHC :
No SVHC
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Width :
4.826mm
Surface Mount :
No
Pin Count :
3
Lead Free :
Lead Free
Continuous Collector Current :
8A
Collector Emitter Voltage (VCEO) :
100V
Emitter Base Voltage (VEBO) :
5V
Datasheets
2N6045
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6045 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:2N6045, Number of Terminations:3, Package / Case:TO-220-3, 2N6045 pinout, 2N6045 datasheet PDF, 2N6045 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6045 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6045


NPN - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

2N6045G Overview


DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

2N6045G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


2N6045G Applications


There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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