2N6040
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- Mfr.Part #
- 2N6040
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 8A TO220
- Stock
- 46,712
- In Stock ：
- 46,712
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 4MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current Rating :
- 8A
- Case Connection :
- COLLECTOR
- Length :
- 10.53mm
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 15.75mm
- Pbfree Code :
- yes
- Max Collector Current :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 8A
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Power Dissipation :
- 75W
- Width :
- 4.83mm
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- 2N6040
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Weight :
- 6.000006g
- Factory Lead Time :
- 2 Weeks
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 1000
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- JEDEC-95 Code :
- TO-220AB
- Polarity :
- PNP
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 75W
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Current - Collector Cutoff (Max) :
- 20μA
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Datasheets
- 2N6040
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6040G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.A 8A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6040G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz
2N6040G Applications
There are a lot of ON Semiconductor
2N6040G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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