2N6036
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- Mfr.Part #
- 2N6036
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A SOT32
- Stock
- 11,003
- In Stock ：
- 11,003
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Collector Emitter Saturation Voltage :
- 2V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Length :
- 8.89mm
- Continuous Collector Current :
- 4A
- Transition Frequency :
- 25MHz
- Polarity :
- PNP
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -80V
- Number of Pins :
- 3
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 6.35mm
- Max Power Dissipation :
- 40W
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Width :
- 6.35mm
- Current Rating :
- -4A
- Base Part Number :
- 2N6036
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Contact Plating :
- Tin
- Datasheets
- 2N6036
PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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