2N6036
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- Mfr.Part #
- 2N6036
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 14,316
- In Stock ：
- 14,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Base Part Number :
- 2N6036
- Continuous Collector Current :
- 4A
- Transition Frequency :
- 25MHz
- Width :
- 6.35mm
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Radiation Hardening :
- No
- Max Collector Current :
- 4A
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Height :
- 6.35mm
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Length :
- 8.89mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -4A
- Voltage - Rated DC :
- -80V
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100μA
- Contact Plating :
- Tin
- Power Dissipation :
- 40W
- Pin Count :
- 3
- Polarity :
- PNP
- Datasheets
- 2N6036
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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