2N5967
- Mfr.Part #
- 2N5967
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 37,421
- In Stock :
- 37,421
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-63
- Current - Collector (Ic) (Max) :
- 40 A
- Transistor Type :
- PNP
- Brand :
- Microchip Technology
- Collector-Emitter Voltage-Max :
- 100 V
- JESD-30 Code :
- O-MUPM-D3
- Mounting Type :
- Stud Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Package :
- Bulk
- VCEsat-Max :
- 1.2 V
- Technology :
- Si
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- DC Current Gain-Min (hFE) :
- 30
- Reach Compliance Code :
- Unknown
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Pbfree Code :
- No
- Package Shape :
- Round
- Frequency - Transition :
- -
- Surface Mount :
- No
- Terminal Form :
- Solder Lug
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation Ambient-Max :
- 125 W
- Transistor Polarity :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- -
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Terminal Position :
- UPPER
- Supplier Device Package :
- TO-63
- Power - Max :
- 220 W
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Series :
- -
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-211MB, TO-63-4, Stud
- Collector Current-Max (IC) :
- 30 A
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 125 W
- Current - Collector Cutoff (Max) :
- -
- Number of Terminals :
- 3
- Manufacturer :
- Microchip
- Datasheets
- 2N5967
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-211MB, TO-63-4, Stud Stud Mount
2N5967 Overview
In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is -.Supplier device package TO-63 comes with the product.Voltage of maximal collector-emitter is set to 100 V.The device exhibits a collector-emitter breakdown at 100 V.
2N5967 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63
2N5967 Applications
There are a lot of Microchip Technology
2N5967 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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