2N4922G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Bulk

Published :

2000

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Base Part Number :

2N4922

hFE Min :

40

Max Power Dissipation :

30W

Gain Bandwidth Product :

3MHz

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

ECCN Code :

EAR99

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

60V

Factory Lead Time :

2 Weeks

Emitter Base Voltage (VEBO) :

5V

Width :

2.9972mm

Collector Emitter Breakdown Voltage :

60V

REACH SVHC :

No SVHC

Height :

11.0998mm

Voltage - Rated DC :

60V

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Pin Count :

3

Current - Collector Cutoff (Max) :

500μA

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Power Dissipation :

30W

Current Rating :

1A

Collector Emitter Saturation Voltage :

600mV

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Frequency :

3MHz

Length :

7.7978mm

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Polarity/Channel Type :

NPN

Number of Pins :

3

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 500mA 1V

Transition Frequency :

3MHz

Transistor Application :

SWITCHING

Transistor Type :

NPN

Max Collector Current :

1A