2N4920G
- Mfr.Part #
- 2N4920G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Current Rating :
- -3A
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 30W
- Transition Frequency :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 600mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Height :
- 11.049mm
- Max Collector Current :
- 3A
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 1A
- Frequency :
- 3MHz
- Voltage - Rated DC :
- -80V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 80V
- Width :
- 2.667mm
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Published :
- 2004
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Surface Mount :
- No
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 500μA
- Length :
- 7.7216mm
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Base Part Number :
- 2N4920
- Weight :
- 4.535924g
- Max Power Dissipation :
- 30W
- Datasheets
- 2N4920G
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PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4920G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
2N4920G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
2N4920G Applications
There are a lot of ON Semiconductor
2N4920G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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